The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Dec. 18, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chun-Sheng Liang, Changhua County, TW;
Wei-Chih Kao, Taipei, TW;
Hsin-Che Chiang, Taipei, TW;
Kuo-Hua Pan, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66575 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 2029/7858 (2013.01); H01L 2221/1042 (2013.01); H01L 2221/1063 (2013.01);
Abstract
A semiconductor device includes a substrate, a gate stack over the substrate, an insulating structure over the gate stack, a conductive via in the insulating structure, and an contact etch stop layer (CESL) over the insulating structure. The insulating structure has an air slit therein. The conductive via is electrically connected to the gate stack. A portion of the CESL is exposed in the air slit.