The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Sep. 30, 2016
Intel Corporation, Santa Clara, CA (US);
Bruce A. Block, Portland, OR (US);
Sansaptak Dasgupta, Hillsboro, OR (US);
Paul B. Fischer, Portland, OR (US);
Han Wui Then, Portland, OR (US);
Marko Radosavljevic, Portland, OR (US);
INTEL CORPORATION, Santa Clara, CA (US);
Abstract
Techniques are disclosed for forming resonator devices using epitaxially grown piezoelectric films. Given the epitaxy, the films are single crystal or monocrystalline. In some cases, the piezoelectric layer of the resonator device may be an epitaxial III-V layer such as an Aluminum Nitride, Gallium Nitride, or other group III material-nitride (III-N) compound film grown as a part of a single crystal III-V material stack. In an embodiment, the III-V material stack includes, for example, a single crystal AlN layer and a single crystal GaN layer, although any other suitable single crystal piezoelectric materials can be used. An interdigitated transducer (IDT) electrode is provisioned on the piezoelectric layer and defines the operating frequency of the filter. A plurality of the resonator devices can be used to enable filtering specific different frequencies on the same substrate (by varying dimensions of the IDT electrodes).