The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Jun. 26, 2018
Lam Research Corporation, Fremont, CA (US);
Chia-Chun Wang, Fremont, CA (US);
Eric Hudson, Berkeley, CA (US);
Andrew Clark Serino, Livermore, CA (US);
Nerissa Draeger, Fremont, CA (US);
Zhonghao Zhang, Santa Clara, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for selectively etching a dielectric layer with respect to an epitaxial layer or metal-based hardmask is provided. The method comprises performing a plurality of cycles. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a deposition gas, wherein the deposition gas comprises helium and a hydrofluorocarbon or fluorocarbon, forming the deposition gas into a plasma to effect a fluorinated polymer deposition, and stopping the flow of the deposition gas. The activation phase comprises flowing an activation gas comprising an ion bombardment gas, forming the activation gas into a plasma, providing an activation bias to cause ion bombardment of the fluorinated polymer deposition, wherein the ion bombardment activates fluorine from the fluorinated polymer deposition to etch the dielectric layer, and stopping the flow of the activation gas.