The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Nov. 09, 2015
Applicant:

Nissan Chemical Industries, Ltd., Tokyo, JP;

Inventors:

Makoto Nakajima, Toyama, JP;

Kenji Takase, Funabashi, JP;

Masahisa Endo, Toyama, JP;

Hiroyuki Wakayama, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); C07F 7/18 (2006.01); H01L 21/027 (2006.01); C09D 183/00 (2006.01); C08G 77/14 (2006.01); C08G 77/18 (2006.01); C09D 183/06 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C07F 7/1804 (2013.01); C08G 77/14 (2013.01); C08G 77/18 (2013.01); C09D 183/00 (2013.01); C09D 183/06 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01); H01L 21/027 (2013.01); H01L 21/0274 (2013.01);
Abstract

A film-forming composition having favorable effects such as curability and embeddability and resist underlayer film for use in lithography process for semiconductor devices. The film-forming composition including, as silane, hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, wherein hydrolyzable silane includes hydrolyzable silane of Formula (1):RRSi(R)  Formula (1)in Formula (1), Ris organic group of Formula (2) and is bonded to silicon atom through Si—C bond: The film-forming composition, wherein the hydrolyzable silane is combination of hydrolyzable silane of Formula (1) with another hydrolyzable silane, wherein other hydrolyzable silane is at least one selected from group made of hydrolyzable silane of Formula (3):RSi(R)  Formula (3)and hydrolyzable silane of Formula (4):RSi(R)Y  Formula (4)Resist underlayer film, obtained by applying the resist underlayer film-forming composition on semiconductor substrate and baking.


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