The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Sep. 10, 2018
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Jin Wen Dong, Wuhan, CN;
Jun Chen, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Zi Qun Hua, Wuhan, CN;
Jifeng Zhu, Wuhan, CN;
He Chen, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
The present invention relates to a memory structure and a method for forming the same. The memory structure includes a first substrate and an isolation structure. The first substrate includes a substrate layer and a storage layer. The substrate layer has a first surface and a second surface opposite to the first surface. The storage layer is disposed on the first surface of the substrate layer. The substrate layer has a doped well. The isolation structure penetrates through the substrate layer and is disposed at an edge of the doped well for isolating the doped well and the peripheral substrate layer. The memory structure can avoid current leakage between the doped well and the substrate layer so as to improve the performance.