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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10833061 B1

PDFFull Text
Date of Patent:
Nov. 10, 2020

Filed:

Dec. 11, 2018

Semiconductor device including source/drain contact having height below gate stack

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Charles Chew-Yuen Young, Cupertino, CA (US);

Chih-Liang Chen, Hsinchu, TW;

Chih-Ming Lai, Hsinchu, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Shun-Li Chen, Tainan, TW;

Kam-Tou Sio, Hsinchu County, TW;

Shih-Wei Peng, Hsinchu, TW;

Chun-Kuang Chen, Hsinchu County, TW;

Ru-Gun Liu, Hsinchu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Matthew E Gordon

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 21/8234 (2006.01); H01L 23/485 (2006.01); G06F 30/394 (2020.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G06F 30/394 (2020.01); H01L 21/76895 (2013.01); H01L 21/823418 (2013.01); H01L 21/823425 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 23/485 (2013.01); H01L 21/76897 (2013.01); H01L 21/845 (2013.01); H01L 23/528 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Gate structures extending continuously above a first active region, a second active region and a non-active region of a substrate of a semiconductor structure are arranged. At least one local interconnect over the non-active region and between two of the gate structures is selectively arranged, to couple at least one of contacts that is arranged above the first active region to at least one of the contacts that is arranged above the second active region.

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Young, Charles Chew-Yuen. (2020). Semiconductor device including source/drain contact having height below gate stack (U.S. Patent No. 10833061). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10833061

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