The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Feb. 14, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Tsan-Chun Wang, Hsinchu, TW;
Chiao-Ting Tai, New Taipei, TW;
Che-Fu Chiu, New Taipei, TW;
Chun-Feng Nieh, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/3215 (2006.01); H01L 21/324 (2006.01); H01J 37/32 (2006.01); H01J 37/30 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01J 37/30 (2013.01); H01J 37/321 (2013.01); H01J 37/32422 (2013.01); H01L 21/324 (2013.01); H01L 21/32155 (2013.01);
Abstract
A method for forming a semiconductor structure comprises heating a solid material to form a gaseous substance; ionizing the gaseous substance to produce a first type of ions; and implanting the first type of ions into a semiconductor substrate. The method can achieve better abruptness, better shallow junction depth, and better sheet resistance.