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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10832891 B1

PDFFull Text
Date of Patent:
Nov. 10, 2020

Filed:

Dec. 05, 2017

Plasma processing apparatus and plasma processing method

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Ryota Sakane, Miyagi, JP;

Hideyuki Kobayashi, Miyagi, JP;

Hiroshi Nagahata, Miyagi, JP;

Jungwoo Na, Gyeonggi-do, KR;

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

Rudy Zervigon

Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); C23C 16/458 (2006.01); C23C 16/505 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32082 (2013.01); C23C 16/4585 (2013.01); C23C 16/4586 (2013.01); C23C 16/505 (2013.01); H01J 37/32449 (2013.01); H01J 37/32651 (2013.01); H01J 37/32715 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/0332 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 21/6831 (2013.01); H01L 21/6833 (2013.01);
Abstract

A plasma processing apparatus includes a process chamber, and a pedestal provided in the process chamber and configured to hold a substrate. The plasma processing apparatus includes a first gas supply part configured to be able to supply a first gas from a location facing the pedestal, and a radio frequency power source configured to convert the first gas to plasma. A shield part to block the first gas converted to plasma is provided around the pedestal. The plasma processing apparatus further includes an evacuation part configured to evacuate the process chamber through the shield part, and a second gas supply part configured to be able to supply a second gas to a space between the shield part and the evacuation part.

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