The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Jul. 12, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Fu-Ting Sung, Taoyuan County, TW;
Chung-Chiang Min, Hsinchu County, TW;
Wei-Hang Huang, Kaohsiung, TW;
Shih-Chang Liu, Kaohsiung, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Semiconductor structures are provided. The semiconductor structure includes a substrate and a first gate electrode formed over the substrate. The semiconductor structure further includes a dielectric layer formed on a sidewall of the first gate electrode and a second gate electrode formed over the substrate and separated from the first gate electrode by the dielectric layer. The semiconductor structure further includes a contact formed over the second gate electrode. In addition, the contact has a first extending portion and a second extending portion extending along opposite sidewalls of the second gate electrode.