The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Jun. 07, 2017
Tokyo Electron Limited, Tokyo, JP;
Shigeru Tahara, Miyagi, JP;
Daisuke Urayama, Miyagi, JP;
Kenji Matsumoto, Miyagi, JP;
Hidenori Miyoshi, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A method MT in an embodiment is a method for etching an etching target layer EL which is included in a wafer W and contains copper. The wafer W includes the etching target layer EL, and a mask MK provided on the etching target layer EL. In the method MT, the etching target layer EL is etched by repeatedly executing a sequence SQ including a first step of generating a plasma of a first gas in a processing containerof a plasma processing apparatusin which the wafer W is accommodated, a second step of generating a plasma of a second gas in the processing container, and a third step of generating a plasma of a third gas in the processing container. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.