The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Jul. 19, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chi-Che Tseng, Hsin-Chu, TW;

Chen-Yuan Wang, Hsin-Chu, TW;

Wilson Hsieh, Hsin-Chu, TW;

Yi-Hung Lin, Taipei, TW;

Chung-Li Huang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/66 (2006.01); H01L 21/308 (2006.01); G03F 1/38 (2012.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); G03F 1/38 (2013.01); H01L 21/3086 (2013.01); H01L 21/823431 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); H01L 22/30 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01);
Abstract

An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.


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