The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Apr. 02, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Rung-De Wang, Kaohsiung, TW;

Chen-Hsun Liu, Tainan, TW;

Chin-Yu Ku, Hsinchu, TW;

Te-Hsun Pang, Tainan, TW;

Chia-Hua Wang, Tainan, TW;

Pei-Shing Tsai, Tainan, TW;

Po-Chang Lin, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 21/683 (2006.01); H01L 23/58 (2006.01); H01L 21/78 (2006.01); H01L 21/782 (2006.01); H01L 21/784 (2006.01); H01L 21/8238 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/6835 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 23/3142 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/585 (2013.01); H01L 21/782 (2013.01); H01L 21/784 (2013.01); H01L 21/823871 (2013.01); H01L 23/49827 (2013.01); H01L 23/5384 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01);
Abstract

A manufacturing method of a semiconductor structure includes at least the following steps. A semiconductor device having a first surface and a second surface opposite to the first surface is provided. A plurality of through semiconductor vias (TSV) embedded in the semiconductor device is formed. A first seal ring is formed over the first surface of the semiconductor device. The first seal ring is adjacent to edges of the first surface and is physically in contact with the TSVs. A second seal ring is formed over the second surface of the semiconductor device. The second seal ring is adjacent to edges of the second surface and is physically in contact with the TSVs.


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