The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Apr. 09, 2019
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Sonam D. Sherpa, Albany, NY (US);
Alok Ranjan, Austin, TX (US);
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
Embodiments provide isotropic and selective etching of silicon nitride layers for the manufacture of microelectronic workpieces through sequential exposure of silicon nitride layers to plasma including hydrogen radicals and plasma including fluorine radicals. For example, the sequential application of plasma etch steps can use: (1) a first plasma gas including hydrogen (H) and argon (Ar), and (2) a second plasma gas including nitrogen trifluoride (NF), oxygen (O), and Ar. These plasma gases are ignited within a processing region or chamber under sufficient pressure to generate the hydrogen radicals and the fluorine radicals. Other plasma gas chemistries can also be used under sufficient pressures to generate alternating application of hydrogen radicals and fluorine radicals.