The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Jul. 03, 2018
Tokyo Electron Limited, Tokyo, JP;
Noriyuki Kobayashi, Nirasaki, JP;
Toshinori Debari, Nirasaki, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
An etching method of etching a silica-based residue containing a base component formed in an SiOfilm, includes selectively etching the silica-based residue by supplying an HF gas, an HO gas or an alcohol gas to a target substrate having the SiOfilm, on which the silica-based residue is formed, and removing an etching residue caused by the selectively etching the silica-based residue, after the selectively etching the silica-based residue. The removing an etching residue includes a first process of supplying an HO gas or an alcohol gas to the target substrate and a second process of heating the target substrate after the first process.