The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Sep. 18, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Katsuhito Hirose, Nirasaki, JP;

Kunihiro Tada, Nirasaki, JP;

Kenji Suzuki, Nirasaki, JP;

Takeshi Shinohara, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/44 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45544 (2013.01); C23C 16/34 (2013.01); C23C 16/4412 (2013.01); C23C 16/4554 (2013.01); C23C 16/45506 (2013.01);
Abstract

A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of the ceiling part in circumferential directions of the placement part and the ceiling part. A reaction gas supplied from the reaction gas supply part into the process space via the ceiling part flows outside of the process space via the annular gap. A plurality of gas flow channels, which is used for forming gas-flow walls, is formed in the outer peripheral portion of the ceiling part which provides the annular gap.


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