The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Aug. 20, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Ruilong Xie, Niskayuna, NY (US);
Chanro Park, Clifton Park, NY (US);
Julien Frougier, Albany, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Andre P. Labonte, Mechanicville, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 29/45 (2006.01); H01L 21/768 (2006.01); H01L 27/088 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/285 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 21/3105 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 29/665 (2013.01); H01L 21/0273 (2013.01); H01L 21/02271 (2013.01); H01L 21/02532 (2013.01); H01L 21/26513 (2013.01); H01L 21/28518 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01); H01L 29/41775 (2013.01); H01L 29/42372 (2013.01); H01L 29/456 (2013.01); H01L 21/31053 (2013.01); H01L 21/32134 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01);
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to contact structures and methods of manufacture. The structure includes: a plurality of gate structures comprising source and drain regions and sidewall spacers; contacts connecting to at least one gate structure of the plurality of gate structures; and at least one metallization feature connecting to the source and drain regions and extending over the sidewall spacers.