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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10790375 B1

PDFFull Text
Date of Patent:
Sep. 29, 2020

Filed:

Apr. 25, 2019

High electron mobility transistor

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Fu-Wei Yao, Hsinchu, TW;

Chen-Ju Yu, Yilan County, TW;

King-Yuen Wong, Hong Kong, CN;

Chun-Wei Hsu, Taichung, TW;

Jiun-Lei Jerry Yu, Hsinchu County, TW;

Fu-Chih Yang, Kaohsiung County, TW;

Chun Lin Tsai, Hsin-Chu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Tan N Tran

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/778 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/452 (2013.01); H01L 21/0254 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/28575 (2013.01); H01L 29/0843 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/41725 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01);
Abstract

A high electron mobility transistor (HEMT) includes a first compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A salicide source feature and a salicide drain feature are in contact with the first III-V compound layer through the second III-V compound layer. A gate electrode is disposed over a portion of the second compound layer between the salicide source feature and the salicide drain feature.

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