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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10790187 B1

PDFFull Text
Date of Patent:
Sep. 29, 2020

Filed:

Jan. 17, 2018

Post-etch residue removal for advanced node beol processing

Applicant:

Entegris, Inc., Billerica, MA (US);

Inventors:

Emanuel I. Cooper, Scarsdale, NY (US);

Makonnen Payne, White Plains, NY (US);

WonLae Kim, Gyeonggi-do, KR;

Eric Hong, Suwon-si, KR;

Sheng-Hung Tu, Billerica, MA (US);

Chieh Ju Wang, Billerica, MA (US);

Chia-Jung Hsu, Billerica, MA (US);

Assignee:

ENTEGRIS, INC., Billerica, MA (US);

Attorney:

Entegris, Inc.

Primary Examiner:

Gregory E Webb

Int. Cl.
CPC ...
C11D 7/50 (2006.01); H01L 21/768 (2006.01); B08B 7/00 (2006.01); H01L 21/02 (2006.01); C11D 3/395 (2006.01); C23G 1/20 (2006.01); C11D 7/32 (2006.01); C11D 7/36 (2006.01); C11D 3/00 (2006.01); C11D 3/39 (2006.01); C09K 13/00 (2006.01); G03F 7/42 (2006.01); C11D 7/26 (2006.01); C11D 7/08 (2006.01); C23G 1/18 (2006.01); C11D 11/00 (2006.01); C23G 1/26 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76814 (2013.01); B08B 7/0014 (2013.01); C09K 13/00 (2013.01); C11D 3/0073 (2013.01); C11D 3/3947 (2013.01); C11D 3/3956 (2013.01); C11D 7/08 (2013.01); C11D 7/265 (2013.01); C11D 7/3209 (2013.01); C11D 7/3245 (2013.01); C11D 7/3281 (2013.01); C11D 7/36 (2013.01); C11D 11/0047 (2013.01); C23G 1/18 (2013.01); C23G 1/20 (2013.01); C23G 1/26 (2013.01); G03F 7/423 (2013.01); G03F 7/425 (2013.01); H01L 21/02063 (2013.01); H01L 21/31111 (2013.01);
Abstract

The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

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