The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Sep. 20, 2019
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Julien Frougier, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Puneet Harischandra Suvarna, Menands, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 27/092 (2006.01); H01L 21/822 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/845 (2013.01); H01L 21/8221 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/66545 (2013.01);
Abstract

A device is disclosed that includes a first transistor device of a first type and a second transistor device of a second type positioned vertically above the first transistor, wherein the first type and second type of transistors are opposite types. The device also includes a gate structure for the first transistor and the second transistor, wherein the gate structure comprises a first gate electrode for the first transistor and a second gate electrode for the second transistor and a gate stack spacer positioned vertically between the first gate electrode and the second gate electrode so as to electrically isolate the first gate electrode from the second gate electrode.


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