The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Sep. 18, 2018
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yi-How Chou, New Taipei, TW;

Tzu-Hao Fu, Kaohsiung, TW;

Tsung-Yin Hsieh, Tainan, TW;

Chih-Sheng Chang, Tainan, TW;

Shih-Chun Tsai, Pingtung County, TW;

Kun-Chen Ho, Tainan, TW;

Yang-Chou Lin, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76814 (2013.01); H01L 21/76813 (2013.01); H01L 21/76826 (2013.01); H01L 21/76835 (2013.01); H01L 21/76843 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01);
Abstract

A method for fabricating metal interconnect structure includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer on a substrate; forming a cap layer on the first metal interconnection; forming a second IMD layer on the cap layer; performing a first etching process to remove part of the second IMD layer for forming an opening; performing a plasma treatment process; and performing a second etching process to remove polymers from bottom of the opening.


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