The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Jan. 03, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jian-Hong Lin, Yunlin County, TW;
Kuo-Yen Liu, Hsinchu County, TW;
Hsin-Chun Chang, Taipei, TW;
Tzu-Li Lee, Yunlin County, TW;
Yu-Ching Lee, Kaohsiung, TW;
Yih-Ching Wang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device and a method of manufacture thereof are provided. The method for manufacturing the semiconductor device includes forming a first dielectric layer on a substrate. Next, forming a first dummy metal layer on the first dielectric layer. Then, forming a second dielectric layer over the first dummy metal layer. Furthermore, forming an opening in the second dielectric layer and the first dummy metal layer. Then, forming a dummy via in the opening, wherein the dummy via extending through the second dielectric layer and at least partially through the first dummy metal layer. Finally, forming a second dummy metal layer on the second dielectric layer and contact the dummy via.