The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Mar. 24, 2017
Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Brian J. Coppa, Eagle, ID (US);
Deepak Vedhachalam, Boise, ID (US);
Francois C. Dassapa, Fremont, CA (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B08B 7/00 (2006.01); B08B 9/08 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); G01N 21/73 (2006.01); G01N 21/94 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
B08B 7/0035 (2013.01); B08B 9/0865 (2013.01); G01N 21/73 (2013.01); G01N 21/94 (2013.01); H01J 37/32146 (2013.01); H01J 37/32669 (2013.01); H01J 37/32697 (2013.01); H01J 37/32862 (2013.01); H01J 37/32972 (2013.01); H01J 37/32981 (2013.01); H01L 21/67023 (2013.01); H01L 21/67069 (2013.01); H01L 22/12 (2013.01); H01J 2237/335 (2013.01);
Abstract
Described herein are architectures, platforms and methods for acquiring optical emission spectra from an optical emission spectroscopy system by flowing a dry cleaning gas into a plasma processing chamber of the plasma processing system and igniting a plasma in the plasma processing chamber to initiate the waferless dry cleaning process.