The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Jun. 15, 2018
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Schenectady, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Jia Zeng, Sunnyvale, CA (US);
Youngtag Woo, San Ramon, CA (US);
Mahender Kumar, San Jose, CA (US);
Guillaume Bouche, Albany, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A semiconductor structure includes a substrate having a first region and a second region, a first source/drain disposed on the substrate in the first region, an interlevel dielectric (ILD) disposed on the source/drain, and a first gate disposed on the substrate. The semiconductor structure further includes a first contact trench within the ILD extending to the first source/drain, a first trench contact within the first contact trench, and a first source/drain contact trench extending to the first trench contact. The semiconductor structure further includes a cross couple contact trench within the ILD, and a cross couple contact disposed in the cross couple contact trench in contact with the first gate and the first trench contact. The cross couple contact couples the first source/drain and the first gate.