The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Sep. 19, 2018
Applicant:
Advanpack Solutions Pte Ltd., Singapore, SG;
Inventors:
Jimmy Hwee-Seng Chew, Singapore, SG;
Kian-Hock Lim, Singapore, SG;
Oviso Dominador Jr. Fortaleza, Singapore, SG;
Shoa-Siong Lim, Singapore, SG;
Assignee:
ADVANPACK SOLUTIONS PTE LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/568 (2013.01); H01L 21/4846 (2013.01); H01L 21/6835 (2013.01); H01L 23/49861 (2013.01); H01L 21/486 (2013.01); H01L 23/3107 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/85447 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/181 (2013.01); H01L 2924/207 (2013.01);
Abstract
A semiconductor structure for manufacturing a semiconductor package device is provided. The semiconductor structure includes a carrier and a dielectric layer. The carrier has a first surface and a second surface opposite to the first surface. The carrier includes an inner core layer and an exterior clad layer, and the inner core layer is covered by the exterior clad layer. The dielectric layer is formed on the first surface of the carrier. The carrier supports the dielectric layer.