The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Aug. 15, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yung-Sung Yen, New Taipei, TW;

Chun-Kuang Chen, Hsinchu County, TW;

Ko-Bin Kao, Taichung, TW;

Ken-Hsien Hsieh, Taipei, TW;

Ru-Gun Liu, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); H01L 21/0228 (2013.01); H01L 21/0273 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01);
Abstract

A technique for patterning a workpiece such as an integrated circuit workpiece is provided. In an exemplary embodiment, the method includes receiving a dataset specifying a plurality features to be formed on the workpiece. A first patterning of a hard mask of the workpiece is performed based on a first set of features of the plurality of features, and a first spacer material is deposited on a sidewall of the patterned hard mask. A second patterning is performed based on a second set of features, and a second spacer material is deposited on a sidewall of the first spacer material. A third patterning is performed based on a third set of features. A portion of the workpiece is selectively processed using a pattern defined by a remainder of at least one of the patterned hard mask layer, the first spacer material, or the second spacer material.


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