The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Dec. 11, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Shich-Chang Suen, Hsinchu, TW;
Chi-Jen Liu, Taipei, TW;
Ying-Liang Chuang, Hsinchu County, TW;
Li-Chieh Wu, Hsinchu, TW;
Liang-Guang Chen, Hsinchu, TW;
Ming-Liang Yen, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A chemical mechanical polishing (CMP) system and associated semiconductor fabrication methods are disclosed herein. An exemplary method includes performing a planarization process in a polishing unit of a CMP system to planarize a surface of a material layer using a CMP slurry. The method further includes, after performing the planarization process, performing a buffing process in the polishing unit of the CMP system to buff the surface of the material layer using an ozone gas dissolved in deionized water (O/DIW) solution. The method further includes controlling the performing of the planarization process and the performing of the buffing process, such that the CMP slurry is received by the polishing unit from a first pipeline during the planarization process and the O/DIW solution is received by the polishing unit from a second pipeline during the buffing process.