The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Oct. 25, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Joung-Wei Liou, Zhudong, TW;
Chin Kun Lan, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method includes forming a multi-layer mask over a dielectric layer. Forming the multi-layer mask includes forming a bottom layer over the dielectric layer. A first middle layer is formed over the bottom layer. The first middle layer includes a first silicon-containing material. The first silicon-containing material has a first content of Si—CHbonds. A second middle layer is formed over the first middle layer. The second middle layer includes a second silicon-containing material. The second silicon-containing material has a second content of Si—CHbonds less than the first content of Si—CHbonds.