The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Jul. 18, 2018
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Yi Jiang, Singapore, SG;
Curtis Chun-I Hsieh, Singapore, SG;
Wanbing Yi, Singapore, SG;
Juan Boon Tan, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 23/532 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 23/53295 (2013.01); H01L 27/222 (2013.01); H01L 43/12 (2013.01);
Abstract
A device including a capping layer over a portion of a top electrode, and method of production thereof. Embodiments include an MRAM cell in a first region and a logic area in a second region of a substrate, wherein the MRAM cell includes a MTJ pillar between a top electrode and a bottom electrode; and a capping layer over a portion of the top electrode.