Integrated circuits with integrated memory structures and capacitors and methods for fabricating the same

Abstract

Integrated circuits with integrated memory devices and high capacitors, and methods for fabricating such integrated circuits are provided. An exemplary method for fabricating an integrated circuit includes forming, from a lower conductive layer, a lower memory interconnect and a lower capacitor interconnects over a substrate. The method further includes forming a conductive memory via coupled to the lower memory interconnect and a conductive capacitor vias coupled to the lower capacitor interconnect. Also, the method includes forming a memory structure over the memory via and forming a capacitor dielectric layer over the memory structure and over the capacitor via. Further, the method includes forming, from an upper conductive layer, an upper memory interconnect coupled to the memory structure and an upper capacitor interconnects over the capacitor dielectric layer over the capacitor via. The capacitor via, capacitor dielectric layer, and upper capacitor interconnects form the high capacitor.