The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
May. 21, 2019
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); C23C 16/30 (2006.01); H01L 29/74 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); C23C 16/30 (2013.01); C23C 16/306 (2013.01); C23C 16/45553 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02664 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/742 (2013.01); H01L 29/778 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01);
Abstract
A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.