The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Jun. 15, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Manabu Honma, Oshu, JP;

Yuka Nakasato, Oshu, JP;

Kohei Doi, Oshu, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); C23C 16/511 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4584 (2013.01); C23C 16/345 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/45551 (2013.01); C23C 16/45565 (2013.01); C23C 16/511 (2013.01); C23C 16/52 (2013.01);
Abstract

A film forming method comprises loading a substrate on a rotary table, forming an adsorption region for adsorbing a raw material gas to the substrate by discharging the raw material gas from multiple discharge ports, forming a reaction region, to which a reaction gas is supplied, at a position spaced from the adsorption region, separating an atmosphere of the adsorption region and an atmosphere of the reaction region by exhausting and by supplying a purge gas, forming a film by performing a cycle a plurality of times to deposit the reaction product on the substrate, the cycle comprising passing the substrate through the adsorption region and the reaction region and setting a combination of flow rates of the raw material gas for a first pattern in order to perform the cycle with the first pattern and for a second pattern in order to perform the cycle with the second pattern.


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