The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
May. 30, 2017
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventors:
Lakshminarayan Viswanathan, Phoenix, AZ (US);
Jaynal A Molla, Gilbert, AZ (US);
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/373 (2006.01); H01L 23/367 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3736 (2013.01); H01L 23/367 (2013.01); H01L 23/3735 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83439 (2013.01);
Abstract
A semiconductor device and a method of manufacturing the same include a die and a planar thermal layer, and a thick-silver layer having a thickness of at least four (4) micrometers disposed directly onto a first planar side of the planar thermal layer, as well as a metallurgical die-attach disposed between the thick-silver layer and the die, the metallurgical die-attach directly contacting the thick-silver layer.