The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Jun. 24, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
De-Wei Yu, Ping-tung, TW;
Chien-Hao Chen, Chuangwei Township, TW;
Chih-Tang Peng, Zhubei, TW;
Jei Ming Chen, Tainan, TW;
Shu-Yi Wang, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-etch process. In an embodiment, a method for semiconductor processing is provided. The method includes performing a first deposition process to form a conformal film over a bottom surface and along sidewall surfaces of a feature on a substrate. The method includes performing an etch process to remove a portion of the conformal film. The method includes repeating the first deposition process and the etch process to fill the feature with the conformal film. The method includes exposing the conformal film to ultraviolet light.