IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10727045 B1

PDFFull Text
Date of Patent:
Jul. 28, 2020

Filed:

Apr. 30, 2018

Method for manufacturing a semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wan-Lin Tsai, Hsinchu, TW;

Jung-Hau Shiu, New Taipei, TW;

Ching-Yu Chang, Taipei, TW;

Jen Hung Wang, Hsinchu, TW;

Shing-Chyang Pan, Jhudong Township, TW;

Tze-Liang Lee, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Sophia T Nguyen

Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23C 16/02 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/8238 (2006.01); C23C 16/04 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 14/08 (2006.01); C23C 14/06 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01); H01J 37/32 (2006.01); C23C 14/22 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02126 (2013.01); C23C 14/0676 (2013.01); C23C 14/08 (2013.01); C23C 16/0245 (2013.01); C23C 16/042 (2013.01); C23C 16/045 (2013.01); C23C 16/308 (2013.01); C23C 16/401 (2013.01); C23C 16/45529 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); H01L 21/0214 (2013.01); H01L 21/0228 (2013.01); H01L 21/02274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/823821 (2013.01); H01L 29/66795 (2013.01); C23C 14/228 (2013.01); H01J 37/32082 (2013.01); H01J 37/32174 (2013.01); H01L 21/76808 (2013.01); H01L 23/528 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.

Find Patent Forward Citations

Loading…