The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

Mar. 01, 2018
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Min Gyu Sung, Essex, MA (US);

Naushad K Variam, Marblehead, MA (US);

Sony Varghese, Manchester, MA (US);

Johannes Van Meer, Middleton, MA (US);

Jae Young Lee, Bedford, MA (US);

Jun Lee, Andover, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01J 37/32 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/762 (2013.01); H01J 37/32 (2013.01); H01L 21/02236 (2013.01); H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H01L 21/26533 (2013.01); H01L 21/26586 (2013.01); H01L 29/66795 (2013.01);
Abstract

A method of forming a semiconductor device. The method may include providing a device structure, where the device structure comprises a masked portion and a cut portion. The masked portion may comprise a mask covering at least one semiconductor fin of a fin array, and the cut portion may comprise a trench, where the trench exposes a semiconductor fin region of the fin array. The method may further include providing an exposure of the trench to oxidizing ions, the oxidizing ions to transform a semiconductor material into an oxide.


Find Patent Forward Citations

Sung, Min. (2020). Method of forming transistor device having fin cut regions (U.S. Patent No. 10720357). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10720357

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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