The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Apr. 16, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chi-Cheng Hung, Tainan, TW;
Kei-Wei Chen, Tainan, TW;
Yu-Sheng Wang, Tainan, TW;
Ming-Ching Chung, Tainan, TW;
Chia-Yang Wu, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes an epitaxy structure having a recess therein, a dielectric layer over the epitaxy structure, the dielectric layer having a contact hole communicating with the recess, a dielectric spacer liner (DSL) layer on a sidewall of the recess, a barrier layer on the DSL layer, and a conductor. The DSL layer has an opening. The DSL layer extends further into the epitaxy structure than the barrier layer. The conductor is disposed in the contact hole and electrically connected to the epitaxy feature through the opening of the DSL layer.