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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10714340 B1

PDFFull Text
Date of Patent:
Jul. 14, 2020

Filed:

Mar. 27, 2017

Method for processing workpiece

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yoshihide Kihara, Miyagi, JP;

Toru Hisamatsu, Miyagi, JP;

Tomoyuki Oishi, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); G03F 1/80 (2012.01); G03F 1/48 (2012.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01J 37/32 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0276 (2013.01); G03F 1/48 (2013.01); G03F 1/80 (2013.01); H01J 37/32 (2013.01); H01L 21/0228 (2013.01); H01L 21/0273 (2013.01); H01L 21/0275 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01J 2237/334 (2013.01);
Abstract

According to an embodiment, a wafer W includes a layer EL to be etched, an organic film OL, an antireflection film AL, and a mask MK, and a method MT according to an embodiment includes a step of performing an etching process on the antireflection film AL by using the mask MKwith plasma generated in a processing container, in the processing containerof a plasma processing apparatusin which the wafer W is accommodated, and the step includes steps STto STof conformally forming a protective film SX on the surface of the mask MK, and steps STto STof etching the antireflection film AL by removing the antireflection film AL for each atomic layer by using the mask MKon which the protective film SX is formed.

Find Patent Forward Citations

Kihara, Yoshihide. (2020). Method for processing workpiece (U.S. Patent No. 10714340). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10714340

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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