The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Sep. 28, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Ting Lin, Tainan, TW;
Chen-Yuan Kao, Hsinchu, TW;
Rueijer Lin, Hsinchu, TW;
Yu-Sheng Wang, Tainan, TW;
I-Li Chen, Hsinchu, TW;
Hong-Ming Wu, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the first contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.