The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Jan. 30, 2018
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Kctech Co., Ltd., Anseong-si, Gyeonggi-do, KR;

Inventors:

Seung Ho Park, Suwon-si, KR;

Hyun Goo Kong, Suwon-si, KR;

Jung Hun Kim, Anyang-si, KR;

Sang Mi Lee, Daegu, KR;

Woo In Lee, Goyang-si, KR;

Hee Sook Cheon, Seoul, KR;

Sang Kyun Kim, Hwaseong-si, KR;

Hao Cui, Suwon-si, KR;

Jong Hyuk Park, Hwaseong-si, KR;

Il Young Yoon, Hwaseong-si, KR;

Assignees:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

KCTECH Co., Ltd., Miyang-myeon, Anseong-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); C09G 1/02 (2006.01); H01L 21/28 (2006.01); H01L 21/321 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); H01L 21/28123 (2013.01); H01L 21/3212 (2013.01); H01L 21/28079 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10876 (2013.01);
Abstract

A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.


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