The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Jul. 19, 2018
Lam Research Corporation, Fremont, CA (US);
Kari Thorkelsson, Portland, OR (US);
Richard G. Abraham, Sherwood, OR (US);
Steven T. Mayer, Aurora, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
In one implementation a wafer processing method includes filling a plurality of through-resist recessed features with a metal, such that a ratio of fill rate of a first feature to a fill rate of a second feature is R1; followed by electrochemically removing metal such that a ratio of metal removal rate from the first feature to the metal removal rate from the second feature is greater than R1, improving the uniformity of the fill. In some embodiments the method includes contacting an anodically biased substrate with an electrolyte such that the electrolyte has a transverse flow component in a direction that is substantially parallel to the working surface of the substrate. The method can be implemented in an apparatus that is configured for generating the transverse flow at the surface of the substrate. In some implementations the method makes use of distinct electrochemical regimes to achieve improvement in uniformity.