The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Jun. 16, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01J 37/32165 (2013.01); H01J 37/32724 (2013.01); H01J 37/32816 (2013.01); H01L 21/022 (2013.01); H01L 21/3065 (2013.01); H01L 21/32136 (2013.01); H01L 21/67069 (2013.01); H01L 21/67248 (2013.01); H01J 37/32642 (2013.01); H01J 37/32834 (2013.01); H01J 2237/2001 (2013.01); H01J 2237/334 (2013.01);
Abstract
An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature environment where the temperature of a substrate is controlled to be less than or equal to −35° C., supplying a sulfur fluoride-containing gas and a hydrogen-containing gas, generating a plasma from the supplied sulfur fluoride-containing gas and hydrogen-containing gas, and etching a laminated film made up of laminated layers of silicon-containing films having different compositions with the generated plasma.