The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Jul. 04, 2017
Tokyo Electron Limited, Tokyo, JP;
Shinya Morikita, Miyagi, JP;
Takanori Banse, Miyagi, JP;
Yuta Seya, Miyagi, JP;
Ryosuke Niitsuma, Hillsboro, OR (US);
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A method MT according to an embodiment provides a technique capable of controlling a pattern shape during processing of an organic film and the like. A wafer W as an object to which the method MT in the embodiment is applied includes an etching target layer EL, an organic film OL, and a mask ALM, the organic film OL is constituted by a first region VLand a second region VL, the mask ALM is provided on the first region VL, the first region VLis provided on the second region VL, and the second region VLis provided on the etching target layer EL. In the method MT, the first region VLis etched to reach the second region VLby generating a plasma of a gas containing nitrogen gas in the processing containerin which the wafer W is accommodated, a mask OLMis formed from the first region VL, a protective film SX is conformally formed on a side surface SF of the mask OLM, the second region VLis etched to reach the etching target layer EL to form a mask OLMfrom the second region VL