The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Sep. 15, 2015
Applicants:

Carl Zeiss Smt Gmbh, Oberkochen, DE;

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Hermanus Hendricus Petrus Theodorus Bekman, Purmerend, NL;

Dirk Heinrich Ehm, Lauchheim, DE;

Jeroen Huijbregtse, Breda, NL;

Arnoldus Jan Storm, Delft, NL;

Tina Graber, Oberkochen, DE;

Irene Ament, Aalen, DE;

Dries Smeets, Hasselt, BE;

Edwin Te Sligte, Eindhoven, NL;

Alexey Kuznetsov, Culemborg, NL;

Assignees:

CARL ZEISS SMT GMBH, Oberkochen, DE;

ASML NETHERLANDS B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 1/14 (2015.01); G02B 5/08 (2006.01); G21K 1/06 (2006.01); G03F 7/20 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
G02B 1/14 (2015.01); C23C 16/56 (2013.01); G02B 5/0891 (2013.01); G03F 7/7015 (2013.01); G03F 7/70316 (2013.01); G03F 7/70916 (2013.01); G03F 7/70925 (2013.01); G03F 7/70958 (2013.01); G03F 7/70983 (2013.01); G21K 1/062 (2013.01);
Abstract

An optical element (), comprising: a substrate (), an EUV radiation reflecting multilayer system () applied to the substrate, and a protective layer system () applied to the multilayer system and having at least a first and a second layer (). The first layer () is arranged closer to the multilayer system () than is the second layer () and serves as a diffusion barrier for hydrogen. This first layer () has a lower solubility for hydrogen than does the second layer (), which serves for absorbing hydrogen. Also disclosed are an optical system for EUV lithography with at least one such optical element, and a method for treating an optical element in order to remove hydrogen incorporated in at least one layer () of the protective layer system and/or in at least one layer () of the multilayer system ().


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