The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Feb. 07, 2019
Ltcam Co., Ltd., Pyeongtaek-si, Gyeonggi-do, KR;
SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;
Sok Ho Lee, Yongin-si, KR;
Jung Hwan Song, Seoul, KR;
Seong Sik Jeon, Suwon-si, KR;
Sung Il Jo, Daejeon, KR;
Byeoung Tak Kim, Incheon, KR;
Na Han, Seoul, KR;
Ah Hyeon Lim, Daejeon, KR;
Junwoo Lee, Jeollabuk-do, KR;
Min Keun Lee, Seongnam-si, KR;
Joon Won Kim, Seoul, KR;
Hyungsoon Park, Icheon-si, KR;
Pilgu Kang, Icheon-si, KR;
Youngmee Kang, Icheon-si, KR;
Suyeon Lee, Icheon-si, KR;
LTCAM CO., LTD., Pyeongtaek-si, Gyeonggi-do, KR;
SK HYNIX INC., Icheon-si, Gyeonggi-do, KR;
Abstract
Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.