The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Dec. 17, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Harry-Hak-Lay Chuang, Zhubei, TW;
Hung Cho Wang, Taipei, TW;
Tong-Chern Ong, Chong-Her, TW;
Wen-Ting Chu, Kaohsiung, TW;
Yu-Wen Liao, New Taipei, TW;
Kuei-Hung Shen, Hsinchu, TW;
Kuo-Yuan Tu, Hsinchu, TW;
Sheng-Huang Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure, in some embodiments, relates to an integrated circuit. The integrated circuit includes a dielectric protection layer disposed over a dielectric structure that laterally surrounds one or more conductive interconnect layers. The dielectric protection layer has a protrusion extending outward from an upper surface of the dielectric protection layer. A bottom electrode is disposed over the dielectric protection layer and has sidewalls extending outward from a lower surface of the bottom electrode through the dielectric protection layer. The bottom electrode has a substantially planar upper surface over the protrusion. A data storage element is over the substantially planar upper surface of the bottom electrode, and a top electrode is over the data storage element.