The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Feb. 23, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Sheng-Chan Li, Tainan, TW;

I-Nan Chen, Taipei, TW;

Tzu-Hsiang Chen, Changhua County, TW;

Yu-Jen Wang, Kaohsiung, TW;

Yen-Ting Chiang, Tainan, TW;

Cheng-Hsien Chou, Tainan, TW;

Cheng-Yuan Tsai, Hsin-Chu County, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/763 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 21/763 (2013.01); H01L 21/76224 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H01L 21/76237 (2013.01); H01L 27/14643 (2013.01);
Abstract

A semiconductor structure is disclosed. The semiconductor structure includes: a semiconductor substrate having a front surface and a back surface facing opposite to the front surface; a filling material extending from the front surface into the semiconductor substrate without penetrating through the semiconductor substrate, the filling material including an upper portion and a lower portion, the upper portion being in contact with the semiconductor substrate; and an epitaxial layer lined between the lower portion of the filling material and the semiconductor substrate. An associated manufacturing method is also disclosed.


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