The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Sep. 10, 2018
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
A method for forming a 3D memory device is disclosed. The method comprises: forming an alternating conductive/dielectric stack on a substrate; forming a slit vertically penetrating the alternating conductive/dielectric stack; forming an isolation layer on a sidewall of the slit; forming a first conductive layer covering the isolation layer; performing a plasma treatment followed by a first doping process to the first conductive layer; forming a second conductive layer covering the first conductive and filling the slit; performing a second doping process followed by a rapid thermal crystallization process to the second conductive layer; removing an upper portion of the first conductive layer and the second conductive layer to form a recess in the slit; and forming a third conductive layer in the recess.