The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Sep. 04, 2018
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Sonam D. Sherpa, Albany, NY (US);
Alok Ranjan, Austin, TX (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of etching is described. The method includes forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas and at least one additional gas selected from the group consisting of He and H, and exposing the first material on the substrate to the first chemical mixture to modify a first region of the first material. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing an inert gas and an additional gas containing C, H, and F, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material, which contains silicon oxide, relative to the second material and remove the modified first material from the first region of the substrate.