The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Jun. 30, 2011
Xikun Wang, Sunnyvale, CA (US);
Andrew Nguyen, San Jose, CA (US);
Changhun Lee, San Jose, CA (US);
Xiaoming He, Arcadia, CA (US);
Meihua Shen, Fremont, CA (US);
Xikun Wang, Sunnyvale, CA (US);
Andrew Nguyen, San Jose, CA (US);
Changhun Lee, San Jose, CA (US);
Xiaoming He, Arcadia, CA (US);
Meihua Shen, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF-based plasma clean performed at pressures below 30 mT to remove in-situ deposited SiOcoatings from interior surfaces of a gas nozzle hole. Embodiments include a gas nozzle with bottom holes dimensioned sufficiently small to reduce or prevent the in-situ deposited chamber coatings from building up a SiOdeposits on interior surfaces of a nozzle hole.