The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Jul. 27, 2018
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei, CN;
Li Hong Xiao, Hubei, CN;
EnBo Wang, Hubei, CN;
Zhao Hui Tang, Hubei, CN;
Qian Tao, Hubei, CN;
Yu Ting Zhou, Hubei, CN;
Sizhe Li, Hubei, CN;
Zhaosong Li, Hubei, CN;
Sha Sha Liu, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a first alternating conductor/dielectric stack disposed on the substrate and a layer of silicon carbide disposed over the first alternating conductor/dielectric stack. A second alternating conductor/dielectric stack is disposed on the silicon carbide layer. The memory device includes one or more first structures extending orthogonally with respect to the surface of the substrate through the first alternating conductor/dielectric stack and over the epitaxially-grown material disposed in the plurality of recesses, and one or more second structures extending orthogonally with respect to the surface of the substrate through the second alternating conductor/dielectric stack. The one or more second structures are substantially aligned over corresponding ones of the one or more first structures.